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Comparison of an Analog Behavioral and Transistor Level Model of Operational Amplifier
Daniela Durackova, Karol Kovac, Viktor Smiesko
DOI:
Abstract
In the present time of the electronics development lot of the measure equipments are standing in a very close neighborhood of each other. The surrounding of them is then full of various signals of various frequencies and shapes. The electromagnetic influence of these equipments is important for their functionality and performance. The high frequency disturbance with the frequency of 1 MHz and more influence of course also the performance of the operational amplifiers. Lot of such circuit swith the lower power consumption are also sensitive to the very small disturbances. This paper is our contribution to the creating of an Analog Behavioral Model (ABM ) of the OPAMP, which is one of thevery power ful tool and can be used for the SPICE simulations. Some results of the simulations with our proposed model were compared with the measured results as well as with the SPICE simulations on the transistor level. The results showed the good agreement between the modeled and measured values.
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