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Characterization of High Energy Irradiated MOS Structures Using the Capacitance Methods

Pavol Pisecny, Lubica Stuchlikova, Ladislav Harmatha, Milan Tapajna, Otto Csabay

DOI:


Abstract

The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and 10^10cm^2 have been studied by capacitance methods. Electrical activity of the defects has braought increase of interface trap density Dit and a sharp decrease in the generation parameters tr and τg. The parameters of nine deep levels were detected in the investigation MOS structures. Eight of these levels were radiation defects.

Keywords


Energy; MOS; radiation; structures.

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