Helpdesk

Top image

Editorial board

Darius Andriukaitis
Kaunas University of Technology, Lithuania

Alexander Argyros
The University of Sydney, Australia

Radu Arsinte
Technical University of Cluj Napoca, Romania

Ivan Baronak
Slovak University of Technology, Slovakia

Khosrow Behbehani
The University of Texas at Arlington, United States

Mohamed El Hachemi Benbouzid
University of Brest, France

Dalibor Biolek
University of Defence, Czech Republic

Klara Capova
University of Zilina, Slovakia

Erik Chromy
UPC Broadband Slovakia, Slovakia

Milan Dado
University of Zilina, Slovakia

Petr Drexler
Brno University of Technology, Czech Republic

Eva Gescheidtova
Brno University of Technology, Czech Republic

Ray-Guang Cheng
National Taiwan University of Science and Technology, Taiwan, Province of China

Gokhan Hakki Ilk
Ankara University, Turkey

Janusz Jezewski
Institute of Medical Technology and Equipment, Poland

Rene Kalus
VSB - Technical University of Ostrava, Czech Republic

Ivan Kasik
Academy of Sciences of the Czech Republic, Czech Republic

Jan Kohout
University of Defence, Czech Republic

Ondrej Krejcar
University of Hradec Kralove, Czech Republic

Miroslaw Luft
Technical University of Radom, Poland

Stanislav Marchevsky
Technical University of Kosice, Slovakia

Byung-Seo Kim
Hongik University, Korea

Valeriy Arkhin
Buryat State University, Russia

Rupak Kharel
University of Huddersfield, United Kingdom

Fayaz Hussain
Ton Duc Thang University, Vietnam

Peppino Fazio
Ca’ Foscari University of Venice, Italy

Fazel Mohammadi
University of New Haven, United States of America

Thang Trung Nguyen
Ton Duc Thang University, Vietnam

Le Anh Vu
Ton Duc Thang University, Vietnam

Miroslav Voznak
VSB - Technical University of Ostrava, Czech Republic

Zbigniew Leonowicz
Wroclaw University of Science and Technology, Poland

Wasiu Oyewole Popoola
The University of Edinburgh, United Kingdom

Yuriy S. Shmaliy
Guanajuato University, Mexico

Lorand Szabo
Technical University of Cluj Napoca, Romania

Tran Trung Duy
Posts and Telecommunications Institute of Technology, Ho Chi Minh City, Vietnam

Xingwang Li
Henan Polytechnic University, China

Huynh Van Van
Ton Duc Thang University, Vietnam

Lubos Rejfek
University of Pardubice, Czech Republic

Neeta Pandey
Delhi Technological University, India

Huynh The Thien
Ho Chi Minh City University of Technology and Education, Vietnam

Mauro Tropea
DIMES Department of University of Calabria, Italy

Gaojian Huang
Henan Polytechnic University, China

Nguyen Quang Sang
Ho Chi Minh City University of Transport, Vietnam

Anh-Tu Le
Ho Chi Minh City University of Transport, Vietnam

Phu Tran Tin
Ton Duc Thang University, Vietnam


Home Search Mail RSS


Elicitation of Scattering Parameters of Dual-halo Dual-dielectric Triple-material Surrounding Gate (DH-DD-TM-SG) MOSFET for Microwave Frequency Applications

Neeraj Gupta, Prashant Kumar

DOI: 10.15598/aeee.v19i1.3788


Abstract

This paper presents an analytical model for intrinsic short-circuit admittance (Y) parameters of DH-DD-TM-SG MOSFET. Y parameters have been modeled using different small-signal equivalent circuit parameter which is used to find the Scattering parameters. These Y parameters have further been employed for computing S-parameters. These parameters are further used to investigate the microwave performance parameters of the proposed device. The Unilateral Power Gain and the maximum oscillation frequency is determined to evaluatethe microwave performance. The proposed device shows a higher cut-off frequency (f_T) and maximum oscillation frequency as to TM-SG MOSFET. The proposed device exhibits a 4.2% improvement in U_T 2.81% in G_ms and 6.9% improvement in G_MTPG as compared to TMSG. The analytical result of DH-DD-TM-SG MOSFET is in accordance with the simulated results.

Keywords


Admittance parameter; cut-off frequency; halo implantation; scattering parameter; triple material.

Full Text:

PDF