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Darius Andriukaitis
Kaunas University of Technology, Lithuania

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The University of Sydney, Australia

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Technical University of Cluj Napoca, Romania

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Slovak University of Technology, Slovakia

Khosrow Behbehani
The University of Texas at Arlington, United States

Mohamed El Hachemi Benbouzid
University of Brest, France

Dalibor Biolek
University of Defence, Czech Republic

Klara Capova
University of Zilina, Slovakia

Erik Chromy
UPC Broadband Slovakia, Slovakia

Milan Dado
University of Zilina, Slovakia

Petr Drexler
Brno University of Technology, Czech Republic

Eva Gescheidtova
Brno University of Technology, Czech Republic

Ray-Guang Cheng
National Taiwan University of Science and Technology, Taiwan, Province of China

Gokhan Hakki Ilk
Ankara University, Turkey

Janusz Jezewski
Institute of Medical Technology and Equipment, Poland

Rene Kalus
VSB - Technical University of Ostrava, Czech Republic

Ivan Kasik
Academy of Sciences of the Czech Republic, Czech Republic

Jan Kohout
University of Defence, Czech Republic

Ondrej Krejcar
University of Hradec Kralove, Czech Republic

Miroslaw Luft
Technical University of Radom, Poland

Stanislav Marchevsky
Technical University of Kosice, Slovakia

Byung-Seo Kim
Hongik University, Korea

Valeriy Arkhin
Buryat State University, Russia

Rupak Kharel
University of Huddersfield, United Kingdom

Fayaz Hussain
Ton Duc Thang University, Vietnam

Peppino Fazio
Ca’ Foscari University of Venice, Italy

Fazel Mohammadi
University of New Haven, United States of America

Thang Trung Nguyen
Ton Duc Thang University, Vietnam

Le Anh Vu
Ton Duc Thang University, Vietnam

Miroslav Voznak
VSB - Technical University of Ostrava, Czech Republic

Zbigniew Leonowicz
Wroclaw University of Science and Technology, Poland

Wasiu Oyewole Popoola
The University of Edinburgh, United Kingdom

Yuriy S. Shmaliy
Guanajuato University, Mexico

Lorand Szabo
Technical University of Cluj Napoca, Romania

Tran Trung Duy
Posts and Telecommunications Institute of Technology, Ho Chi Minh City, Vietnam

Xingwang Li
Henan Polytechnic University, China

Huynh Van Van
Ton Duc Thang University, Vietnam

Lubos Rejfek
University of Pardubice, Czech Republic

Neeta Pandey
Delhi Technological University, India

Huynh The Thien
Ho Chi Minh City University of Technology and Education, Vietnam

Mauro Tropea
DIMES Department of University of Calabria, Italy

Gaojian Huang
Henan Polytechnic University, China

Nguyen Quang Sang
Ho Chi Minh City University of Transport, Vietnam

Anh-Tu Le
Ho Chi Minh City University of Transport, Vietnam

Phu Tran Tin
Ton Duc Thang University, Vietnam

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Qualitative Assessment of the UV Exposition Process Near the Diffraction Limits

Agnieszka Zawadzka, Kornelia Indykiewicz, Regina Paszkiewicz

DOI: 10.15598/aeee.v18i2.3723


In the presented work the technological parameters that influence the shape of the resist structures are reported. The experimental results are compared with the simulations results, based on the solution of Maxwell’s equations using the RF module of COMSOL Multiphysics software. The electric field intensity distribution in the resist layer was analyzed for the mask slits that are larger and comparable to the applied wavelength. The differences in wave energy absorption in the resist layer are presented and discussed. For both cases, the impact of the chromium film thickness of the mask on the pattern profile of the resist is studied and the comparison is performed between the simulation and experimental results.


UV exposition; diffraction limits; simulations


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ZAWADZKA, A., J. PRAZMOWSKA, R. PASZKIEWICZ. Photolithographic Mask Fabrication Process Using Cr/Sapphire Carriers. Advances in Electrical and Electronic Engineering. 2019, vol. 17, no. 3, pp. 374-378. ISSN 18043119. DOI: 10.15598/aeee.v17i3.3357.

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