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Qualitative Assessment of the UV Exposition Process Near the Diffraction Limits

Agnieszka Zawadzka, Kornelia Indykiewicz, Regina Paszkiewicz

DOI: 10.15598/aeee.v18i2.3723


Abstract

In the presented work the technological parameters that influence the shape of the resist structures are reported. The experimental results are compared with the simulations results, based on the solution of Maxwell’s equations using the RF module of COMSOL Multiphysics software. The electric field intensity distribution in the resist layer was analyzed for the mask slits that are larger and comparable to the applied wavelength. The differences in wave energy absorption in the resist layer are presented and discussed. For both cases, the impact of the chromium film thickness of the mask on the pattern profile of the resist is studied and the comparison is performed between the simulation and experimental results.

Keywords


UV exposition; diffraction limits; simulations

References

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LOZANOVA V., A Lalova, L Soserov and R Todorov. Optical and electrical properties of very thin chromium films for optoelectronic devices. Journal of Physics: Conference Series. 2014, vol. 514, iss. 012003, pp. 1-4. ISSN 1742-6588. DOI:10.1088/1742-6596/514/1/01200.

ZAWADZKA, A., J. PRAZMOWSKA, R. PASZKIEWICZ. Photolithographic Mask Fabrication Process Using Cr/Sapphire Carriers. Advances in Electrical and Electronic Engineering. 2019, vol. 17, no. 3, pp. 374-378. ISSN 18043119. DOI: 10.15598/aeee.v17i3.3357.


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