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Novel Ternary Logic Gates Design in Nanoelectronics

Sajjad Etezadi, Seied Ali Hosseini

DOI: 10.15598/aeee.v17i3.3156


Abstract

In this paper, standard ternary logic gates are initially designed to considerably reduce static power consumption. This study proposes novel ternary gates based on two supply voltages in which the direct current is eliminated and the leakage current is reduced considerably. In addition, ST-OR and ST-AND are generated directly instead of ST-NAND and ST-NOR. The proposed gates have a high noise margin near V_(DD)/4. The simulation results indicated that the power consumption and PDP underwent a~sharp decrease and noise margin showed a considerable increase in comparison to both one supply and two supply based designs in previous works. PDP is improved in the proposed OR, as compared to one supply and two supply based previous works about 83% and 63%, respectively. Also, a memory cell is designed using the proposed STI logic gate, which has a considerably lower static power to store logic ‘1’ and the static noise margin, as compared to other designs.

Keywords


CNTFETs; double supply voltages; static power reduction; ternary logic gates; ternary memory cell.

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